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Radiation effects in a CMOS active pixel sensor

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1 Author(s)
Hopkinson, G.R. ; Sira Electro-Opt. Ltd., Chislehurst, UK

A CMOS active pixel sensor has been evaluated with Co60, 10 MeV proton and heavy-ion irradiation. Permanent displacement damage effects were seen but total ionizing dose-induced dark current and increase in power supply current annealed at 100°C. Large changes in responsivity were seen after proton irradiation, which subsequently annealed. Mechanisms for these responsivity changes are discussed, but a definitive cause has not yet been established

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Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 6 )