By Topic

Measurement of the effective sensitive volume of FAMOS cells of an ultraviolet erasable programmable read-only memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
L. Z. Scheick ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; P. J. McNulty ; D. R. Roth

A method is described for measuring the sensitive volume of the oxide which makes up the collection region for erasure surrounding the floating gate of the FAMOS cell of a UVPROM using the data acquired from the output of the pins of the device. A direct measurement of the dose required to erase the Floating gate Avalanche injected metal oxide silicon (FAMOS) cell yields a measurement of the volume of oxide which collects the charge. Another method using target theory to determine the sensitive volume of the device is also presented with good agreement between the methods. The sensitive volume depends on the LET of the radiation. The ramifications for microdosimetry and cell failure are discussed as well as for the long term use aspects of nonvolatile memories

Published in:

IEEE Transactions on Nuclear Science  (Volume:47 ,  Issue: 6 )