Cart (Loading....) | Create Account
Close category search window
 

2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Khanna, S.M. ; Defense Res. Establ., Ottawa, Ont., Canada ; Webb, J. ; Tang, H. ; Houdayer, A.J.
more authors

Gallium nitride (GaN) thin film samples were grown by ammonia-molecular beam epitaxy. Through room temperature transport measurements, electron mobilities of 560 cm2/Vs were observed for layers with a carrier density of 1.5×1017 cm-3 . Room temperature photoluminescence (PL) spectroscopy revealed the bound exciton transition at 363.0 nm and a weak yellow emission whose intensity was sample dependent. At 22 K, the main photoluminescence signal sharpened, shifted to 356.9 nm (3.474 eV), and the maximum intensity increased by a factor of one hundred; the intensity of the yellow emission decreased. The samples were irradiated at room temperature with 2 MeV protons at fluences of 109, 10 10, 1011, 1012, 1013, 1014, 1015, and 1016 cm-2. The intensity changes were within experimental error up to 1013 cm-2. The drop in intensity of the bound exciton transition was 16% at 1014 cm-2 and 99% at 1015 cm-2. The radiation damage constant associated with the main PL peak at 3.474 eV in GaN is (1.4±0.3)×10-13 cm2, compared with (4±1)×10-11 cm2 associated with the main PL, peak at 1.492 eV in GaAs. For photonic applications, GaN is more robust than GaAs with respect to displacement damage

Published in:

Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 6 )

Date of Publication:

Dec 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.