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2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements

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5 Author(s)
Khanna, S.M. ; Defense Res. Establ., Ottawa, Ont., Canada ; Webb, J. ; Tang, H. ; Houdayer, A.J.
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Gallium nitride (GaN) thin film samples were grown by ammonia-molecular beam epitaxy. Through room temperature transport measurements, electron mobilities of 560 cm2/Vs were observed for layers with a carrier density of 1.5×1017 cm-3 . Room temperature photoluminescence (PL) spectroscopy revealed the bound exciton transition at 363.0 nm and a weak yellow emission whose intensity was sample dependent. At 22 K, the main photoluminescence signal sharpened, shifted to 356.9 nm (3.474 eV), and the maximum intensity increased by a factor of one hundred; the intensity of the yellow emission decreased. The samples were irradiated at room temperature with 2 MeV protons at fluences of 109, 10 10, 1011, 1012, 1013, 1014, 1015, and 1016 cm-2. The intensity changes were within experimental error up to 1013 cm-2. The drop in intensity of the bound exciton transition was 16% at 1014 cm-2 and 99% at 1015 cm-2. The radiation damage constant associated with the main PL peak at 3.474 eV in GaN is (1.4±0.3)×10-13 cm2, compared with (4±1)×10-11 cm2 associated with the main PL, peak at 1.492 eV in GaAs. For photonic applications, GaN is more robust than GaAs with respect to displacement damage

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Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 6 )