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Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers

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2 Author(s)
W. W. Chow ; Sandia Nat. Labs., Albuquerque, NM, USA ; H. Amano

A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mode behavior in group-III nitride quantum-well lasers. Beam filamentation due to self-focusing in the gain medium is found to limit fundamental-mode output to narrow stripe lasers or to operation close to lasing threshold. Differences between nitride and conventional near-infrared semiconductor lasers arise because of band structure differences, in particular, the presence of a strong quantum-confined Stark effect in the former. Increasing mirror reflectivities in plane-plane resonators to reduce lasing threshold current tends to exacerbate the filamentation problem. On the other hand, a negative-branch unstable resonator is found to mitigate filament effects, enabling fundamental-mode operation far above threshold in broad-area lasers

Published in:

IEEE Journal of Quantum Electronics  (Volume:37 ,  Issue: 2 )