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High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

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6 Author(s)
Mishima, Y. ; LCD Lab., Fujitsu Labs. Ltd., Atsugi, Japan ; Yoskino, K. ; Takeuchi, F. ; Ohgata, K.
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High-performance CMOS circuits are fabricated from excimer-laser-annealed poly-Si TFTs on a glass substrate (300×300 mm). The propagation delay time of the 121 stage CMOS ring oscillators with 0.5 μm gate length is 0.18 nsec at 5 V supply voltage. The maximum operating frequency of the 40-stage shift registers with 1 μm gate length is 133 MHz at 5 V supply voltage. This value is high enough for peripheral CMOS circuits with line-at-a-time addressing.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 2 )