By Topic

Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Farmakis, F.V. ; Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France ; Brini, J. ; Kamarinos, G. ; Dimitriadis, C.A.

In this letter, we present experimental data showing that hot-carrier stress in laser annealed polycrystalline silicon thin-film transistors provokes an anomalous turn-on voltage variation. Although under various hot-carrier stress intensities the maximum transconductance degradation shows the same power-time dependent law, turn-on voltage can exhibit different behaviors. This observation lead to the conclusion that turn-on voltage depends on two different degradation mechanisms: injection of hot carriers into the gate oxide and degradation of grain boundaries. We show that these two mechanisms may be distinguished since they obey different power-time dependent laws as a function of stress duration.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 2 )