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Highly strained InGaP/In/sub 0.33/Ga/sub 0.67/As pseudomorphic high electron mobility transistor (p-HEMT) structures were grown on patterned GaAs substrates. Performance of the highly strained p-HEMTs grown on patterned substrates was compared with that of highly strained p-HEMTs and conventional InGaP/In/sub 0.22/Ga/sub 0.78/As p-HEMTs grown on nonpatterned substrates. The highly strained p-HEMTs grown on patterned substrates showed substantial improvements in dc (transconductance and drain saturation current) and rf (cutoff frequency: f/sub T/ and maximum oscillation frequency: f/sub max/) performances as compared with those of the p-HEMTs grown on nonpatterned substrates. The results indicate the potential of highly strained p-HEMTs using reduced area growth for high-speed device applications.