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InAlAs/InGaAs HBTs with simultaneously high values of F/sub /spl tau// and F/sub max/ for mixed analog/digital applications

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6 Author(s)
Betser, Y. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Scott, D. ; Mensa, Dino ; Jaganathan, S.
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We report the design, fabrication, and measurement of InAlAs/InGaAs heterostructure bipolar transistors (HBTs) designed for high speed digital circuits. At 0.96 V V/sub CE/ the current gain cutoff frequency, f/sub /spl tau//, is 300 GHz and the maximum frequency of oscillation, f/sub max/, is 235 GHz. This value of f/sub /spl tau//, is the highest reported for bipolar transistors. At a slightly higher V/sub CE/ bias, a high value of 295 GHz for f/sub /spl tau// and f/sub max/ were obtained simultaneously.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 2 )

Date of Publication:

Feb. 2001

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