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Empirical modeling of LF gate noise in GaAs DCFET in impact ionization regime

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5 Author(s)
Lambert, B. ; IXL Lab., Bordeaux Univ., Talence, France ; Malbert, N. ; Labat, N. ; Verdier, F.
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The evolution of the 1/f gate noise in GaAs DCFET has been analyzed in the impact ionization regime. As the drain bias Vd is raised, a steep increase of the 1/f gate current noise is observed in correlation with the triggering of the impact ionization mechanism. A novel and empirical model of the 1/f low frequency gate current noise S/sub ig/ measured in the impact ionization regime is proposed. The following relation fits it with an exponential law: S/sub ig/=E exp (-F/Vd) (1/f), which is similar to the well-known dependence of the impact ionization rate /spl alpha/ on the drain bias.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 2 )

Date of Publication:

Feb. 2001

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