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Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 μm

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2 Author(s)
Sang-Wan Ryu ; Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA ; Dapkus, P.D.

Vertical cavity surface emitting lasers with a highly strained InGaAs quantum well are demonstrated. Room temperature continuous wave operation was achieved, with a lasing wavelength at 1.22 μm. A high slope efficiency of 0.63 W/A and a maximum power around 1 mW were achieved

Published in:

Electronics Letters  (Volume:37 ,  Issue: 3 )

Date of Publication:

1 Feb 2001

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