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Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation

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6 Author(s)
Ribbat, C. ; Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany ; Sellin, R. ; Grundmann, M. ; Bimberg, D.
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The influence of high energy proton irradiation on the device properties of InGaAs/GaAs quantum dot and quantum well lasers has been investigated. In the regime of spontaneous emission, quantum dot lasers show a much enhanced radiation hardness compared to quantum well lasers, manifested in a smaller increase of threshold current density. However, in the lasing regime the device characteristics are similarly influenced. Internal differential quantum efficiencies are reduced, internal optical losses remain constant

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Electronics Letters  (Volume:37 ,  Issue: 3 )