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An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode

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6 Author(s)
K. Sano ; NTT Photonics Lab., Kanagawa, Japan ; K. Murata ; T. Otsuji ; T. Akeyoshi
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This paper describes an 80-Gb/s optoelectronic delayed flip-flop (D-FF) IC that uses resonant tunneling diodes (RTDs) and a uni-traveling-carrier photodiode (UTC-PD). A circuit design that considers the AC currents passing through RTDs and UTC-PD is key to boosting circuit operation speed. A monolithically fabricated IC operated at 80 Gb/s with a low power dissipation of 7.68 mW. The operation speed of 80 Gb/s is the highest among all reported flip-flops. To clarify the maximum operation speed, we analyze the factors limiting circuit speed. Although the bandwidth of UTC-PD limits the maximum speed of operation to 80 Gb/s at present, the circuit has the potential to offer 100-Gb/s-class operation

Published in:

IEEE Journal of Solid-State Circuits  (Volume:36 ,  Issue: 2 )