By Topic

A new method for extracting carrier mobility from Monte Carlo device simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Haitao Gan ; Dept. of Electr. Eng., Stanford Univ., CA, USA ; Ting-Wei Tang

In this brief, a new method for extracting carrier mobility from the Monte Carlo device simulation is presented. Unlike the conventional method which is based on taking the time-average of the rate of change of momentum before and after the scattering, this method utilizes the spherical harmonic expansion of the carrier distribution function and an analytical expression for the relaxation time. The new method produces a much smoother result than the time-average method, particularly in low electric field regions

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 2 )