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The effect of polysilicon doping on the reverse short-channel effect in sub-quarter micron NMOS transistors

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4 Author(s)
A. Sadovnikov ; Nat. Semicond. Corp., Santa Clara, CA, USA ; A. Kalnitsky ; A. Bergemont ; P. Hopper

Reverse short-channel effect modulation by poly-Si doping level is explained in terms of the effective oxide thickness change due to poly-Si depletion. This modulation is not accounted for in the conventional theories of RSCE and should be taken into consideration in design of submicron CMOSFETs

Published in:

IEEE Transactions on Electron Devices  (Volume:48 ,  Issue: 2 )