By Topic

Distributed B-spline electrothermal models of thyristors proposed for circuit simulation of power electronics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Chih-Ju Hung ; Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA ; P. Roblin ; S. Akhtar

A B-spline based electrothermal model for thyristors is proposed for circuit simulations and is demonstrated for gate-triggered resistive circuits by comparison with PISCES simulation results. The model topology for small area thyristors consists of an electrical device circuit model and a thermal circuit model which are coupled together to establish the interaction between the electrical and thermal responses. A distributed topology is introduced for large area thyristors to simulate the realistic electrothermal spreading effect. Each element of the electrothermal topology is extracted from the DC current-voltage (I-V), quasistatic capacitance-voltage (C-V), and static and transient thermal characteristics simulated with PISCES. The fitting technique relies on B-spline and Tensor Product B-Spline (TPS) numerical methods, as well as, physical-based analytic expressions. This B-spline based electrothermal model is implemented in the SPICE-compatible MISIM circuit simulator. Simulations are performed to obtain the device electrothermal distribution, verify the model accuracy, and demonstrate the device self heating effect for 600 Hz gate-triggered resistive circuits. Excellent agreements are obtained for the DC I-V, transient AC, and electrothermal simulation results between the new circuit model and the PISCES/GIGA simulator for the low-frequency applications considered

Published in:

IEEE Transactions on Electron Devices  (Volume:48 ,  Issue: 2 )