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Quantum device-simulation with the density-gradient model on unstructured grids

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3 Author(s)
Wettstein, A. ; Inst. fur Integrierte Syst., Swiss Federal Inst. of Technol., Zurich, Switzerland ; Schenk, A. ; Fichtner, Wolfgang

We describe an implementation of the density-gradient device equations which is simple and works in any dimension without imposing additional requirements on the mesh compared to classical simulations. It is therefore applicable to real-world device simulation with complex geometries. We use our implementation to determine the quantum mechanical effects for a MOS-diode, a MOSFET and a double-gated SOI MOSFET. The results are compared to those obtained by a 1D-Schrodinger-Poisson solver. We also investigate a simplified variant of the density-gradient term and show that, while it can reproduce terminal characteristics, it does not give the correct density distribution inside the device

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 2 )

Date of Publication:

Feb 2001

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