Referenced Items are not available for this document.
In this paper, a new mobility model for device simulation is presented that incorporates Coulomb scattering due to ionized impurities in the MOS inversion layer. It is well known that the Coulomb scattering strongly depends on carrier concentration because of the screening effect. A crucial technique is used in the modeling procedure, with which a local dependency of the mobility on carrier concentration is derived from the experimental data of the effective mobility. Consequently, the present model has the ability to reproduce the experimental effective mobility over a wide range of impurity concentration with a single parameter set. Comparisons of the simulated and measured IDS-VGS curves show good agreement for 0.15 μm CMOS devices having pure SiO2 and NO-based oxynitride gate oxides
Published in:
Electron Devices, IEEE Transactions on
(Volume:48
,
Issue:
2
)
Date of Publication: Feb 2001
- Page(s):
- 265 - 270
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 6855590
- Digital Object Identifier :
- 10.1109/16.902725
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- Feb 2001
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
