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Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

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10 Author(s)
Koh, Meishoku ; Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan ; Mizubayashi, W. ; Iwamoto, Kunihiko ; Murakami, H.
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We report on a new roadblock which will limit the gate oxide thickness scaling of MOSFETs. It is found that statistical distribution of direct tunnel leakage current through 1.2 to 2.8 nm thick gate oxides induces significant fluctuations in the threshold voltage and transconductance when the gate oxide tunnel resistance becomes comparable to gate poly-Si resistance. By calculating the measured tunnel current based on multiple scattering theory, it is shown that the device characteristics fluctuations will be problematic when the gate oxide thickness is scaled down to less than 1 nm

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 2 )

Date of Publication:

Feb 2001

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