Cart (Loading....) | Create Account
Close category search window
 

Analytical modeling of the partially-depleted SOI MOSFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hammad, M.Y. ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA ; Schroder, D.K.

An analytical model for the partially-depleted (PD) silicon-on-insulator (SOI) MOSFET above threshold was developed. In contrast to previous models, this model includes front-back interface coupling with all the possibilities associated with it (accumulated, neutral, and depleted back interface). The model applies to tied-body as well as floating-body devices; however, thermal and edge effects are neglected. Interface coupling and floating-body effects are integrated together in a new “unified” algorithm. The “pseudo-two-dimensional” approach (which was used successfully to model lateral fields in bulk-Si devices) is extended to SOI devices. The model is extremely physical and thus highly predictive. Good agreement with experiment was obtained over a wide range of channel lengths and back gate voltages. Because of the model's neglect of thermal effects, however, disagreement was observed at high current levels. A brief physical interpretation of the results is also presented

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 2 )

Date of Publication:

Feb 2001

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.