By Topic

Contact size dependence of highly selective self-aligned contact etching with polymer formation and its mechanism

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Y. H. Liu ; Adv. Process Technol. Div., Worldwide Semicond. Manuf. Corp. WSMC, Hsinchu, Taiwan ; Y. L. Tu ; W. Y. Lain ; B. W. Chan
more authors

We found that smaller top CD of self-aligned contact results in less polymer formation but severe bottom nitride loss after SAC oxide etching. This leads to a two-stage mechanism of SAC oxide etching. This mechanism can also describe correctly the effects of gas flow ratio and process pressure. An ideal SAC etching should have controlled flow of radicals with all uniform SAC structure, and a self-limiting mechanism of polymer formation

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI

Date of Conference: