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Physical basis for high-power semiconductor nanosecond opening switches

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2 Author(s)
Grekhov, I.V. ; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia ; Mesyats, G.A.

The physical basis for semiconductor nanosecond opening switches is a specially organized recovery process in the diode. There are two modes of this process: junction recovery (JR) mode and silicon opening switch (SOS) mode. In the JR mode, the current interruption occurs due to the recovery of pn-junction blocking capability, and in the SOS mode, due to the drastic increase in resistance of low-doped part of p-layer, where reverse current density exceeds the saturated value jr>qNdVs. JR mode is preferable for generators with a pulse rise-time of 0.5-3 ns and a pulse of power of less than 50-80 MW, and SOS mode at pulse rise-time of more than 5 ns for any pulse power and at any pulse rise-time if power is higher than 100 MW

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Plasma Science, IEEE Transactions on  (Volume:28 ,  Issue: 5 )