By Topic

Fast high-voltage pulse generation using nonlinear capacitors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
G. -H. Rim ; Korea Electrotechnol. Res. Inst., Changwon, South Korea ; H. -S. Lee ; E. P. Pavlov ; G. -H. Kim
more authors

Many pulsed power applications require short high-voltage pulses with a high-repetition rate. Conventional high-voltage discharge pulse-switches such as thyratrons, spark gap switches, and vacuum tube switches have a short lifetime, whereas the semiconductor switches have a long lifetime and high reliability. The semiconductor switches, however cannot be directly applied to fast high-voltage pulsed power generation due to their limited operating voltage ratings despite their relatively long switching times. Therefore, they are used with voltage amplification and a pulse compression stage. This paper describes two pulse generators that use the semi-conductor switches and nonlinear capacitors: one is based on an opening switch (IGBT) and inductive energy storage, the other is a combination of a closing switch (RSD) and capacitive energy storage

Published in:

IEEE Transactions on Plasma Science  (Volume:28 ,  Issue: 5 )