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Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layers

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4 Author(s)
Egawa, T. ; Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan ; Soga, T. ; Jimbo, T. ; Umeno, Masayoshi

The heterointerfaces of single quantum wells and the characteristics of single-quantum-well lasers on Si substrates grown with Al0.5Ga0.5As-Al0.55Ga0.45 P intermediate layers entirely by metalorganic chemical-vapor deposition are reported. The effects of thermal cycle annealing on the crystallinity and lasing characteristics of GaAs-Si are also reported. Thermal cycle annealing is found to improve the crystallinity of GaAs-Si, and to contribute to room-temperature continuous-wave operations of lasers on Si substrates. By using the Al0.5Ga 0.5As-Al0.55Ga0 intermediate layers, single quantum wells with a specular surface morphology and a smoother heterointerface can be grown on an Si substrate

Published in:

Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )

Date of Publication:

Jun 1991

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