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Low-threshold-current, high-quantum-efficiency 1.5 μm GaInAs-GaInAsP GRIN-SCH single quantum well laser diodes

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4 Author(s)
N. Matsumoto ; Furukawa Electr. Co. Ltd., Yokohama, Japan ; A. Kasukawa ; T. Namegaya ; H. Okamoto

The authors fabricated 1.5 μm GaInAs/GaInAsP graded index, separate confinement heterostructure (GRINSCH) single-quantum-well buried heterostructure laser diodes (LDs) by metalorganic chemical vapor deposition. The LDs exhibit a low internal loss of 4.3 cm-1, a high quantum efficiency of 37-40%/facet, and a high light output power of 109 mW. A very low threshold current of 6.2 mA and a high characteristic temperature of 94 K were obtained by facet coating. The perpendicular far-field angle is 26-32°, which is smaller than that of GRINSCH multiple-quantum-well LDs. These LDs oscillated at the n =1 quantized level, not at the n=2 quantized level

Published in:

IEEE Journal of Quantum Electronics  (Volume:27 ,  Issue: 6 )