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Fabrication and characteristics of gain-coupled distributed feedback semiconductor lasers with a corrugated active layer

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6 Author(s)
Luo, Yi ; Opt. Meas. Technol. Dev. Co. Ltd., Tokyo, Japan ; Nakano, Y. ; Tada, Kunio ; Inoue, T.
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A distributed feedback (DFB) semiconductor laser structure in which pure gain coupling can be realized is proposed. The fabrication procedure of this structure makes use of a special feature of organometallic vapor phase epitaxy. Lasers of this structure were fabricated to show the validity of the proposal. Coupling coefficients of DFB lasers were calculated considering the gain-coupling component. Using the results, a DFB laser was designed to obtain pure gain coupling. The parameters of the actual structure observed under a scanning electron microscope showed good agreement with those designed. Device characteristics predicted for purely gain-coupled DFB lasers were achieved. For greater gain coupling and lower threshold current operation, an optimization of the Al composition of the pattern-providing layer and the thickness of the active layer in the structure has been carried out

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Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )