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Fabrication and characteristics of GaAs-AlGaAs tunable laser diodes with DBR and phase-control sections integrated by compositional disordering of a quantum well

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4 Author(s)
Hirata, T. ; Opt. Meas. Technol. Dev. Co. Ltd., Tokyo, Japan ; Maeda, M. ; Suehiro, M. ; Hosomatsu, H.

GaAs-AlGaAs rib-waveguide graded-index separate-confinement heterostructure (GRINSCH) single-quantum-well (SQW) tunable distributed Bragg reflector (DBR) laser diodes were fabricated by EB lithography, ion implantation, and two-step metalorganic vapor phase epitaxy (MOVPE) growth. Active and passive waveguides were monolithically integrated by the compositional disordering of quantum-well heterostructures using silicon ion implantation. First-order gratings and rib waveguides were adopted with EB lithography to improve lasing characteristics, and they have wide application to photonic integrated circuits (PICs). Waveguide losses of partially disordered GRINSCH-SQW passive waveguides were as low as 4.4 cm-1 at the lasing wavelength. A narrow linewidth as low as 560 kHz and a frequency tuning of more than 2.9 THz were obtained. The results show that this fabrication process is useful for PICs

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Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )