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High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 μm

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2 Author(s)
Choi, H.K. ; Lincoln Lab., MIT, Lexington, MA, USA ; Eglash, Stephen J.

Double-heterostructure Ga0.84In0.16As0.14Sb0.86-Al 0.5Ga0.5As0.04Sb0.96 diode lasers emitting at 2.27 μm were grown by molecular beam epitaxy on GaSb substrates. For pulsed operation of broad-stripe lasers 300 μm wide, differential quantum efficiencies as high as 50% and output power as high as 900 mW/facet were obtained for a cavity length of 300 μm. Values of ~100% for the internal quantum efficiency and 43 cm-1 for the internal loss coefficient were determined from the measured dependence of differential quantum efficiency on cavity length. The threshold current density was as low as 1.5 kA/cm2 for a cavity length of 700 μm

Published in:

Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )