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High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping

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7 Author(s)
Shigihara, Kimio ; Mitsubishi Electr. Corp., Hyogo, Japan ; Nagai, Yutaka ; Karakida, Shoichi ; Takami, A.
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The dependencies of the main lasing characteristics on the facet reflectivity for GaAs and AlGaAs single-quantum-well (SQW) separate-confinement heterostructure (SCH) broad-area laser diodes (LDs) are analyzed. Conditions for the facet reflectivity to achieve optimum values are identified. Under these conditions, the authors obtained respective maximum output powers of 2.9 and 2.6 W for GaAs-SQW and AlGaAs-SQW single-stripe LDs for 150 μm stripe width, lasing at about 808 nm under a continuous-wave (CW) condition. These LDs were stably operated for over 2000 h under the condition of 1 W constant output power with automatic power control circuits at 45°C in CW operation

Published in:

Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )

Date of Publication:

Jun 1991

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