By Topic

High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Shigihara, Kimio ; Mitsubishi Electr. Corp., Hyogo, Japan ; Nagai, Yutaka ; Karakida, Shoichi ; Takami, A.
more authors

The dependencies of the main lasing characteristics on the facet reflectivity for GaAs and AlGaAs single-quantum-well (SQW) separate-confinement heterostructure (SCH) broad-area laser diodes (LDs) are analyzed. Conditions for the facet reflectivity to achieve optimum values are identified. Under these conditions, the authors obtained respective maximum output powers of 2.9 and 2.6 W for GaAs-SQW and AlGaAs-SQW single-stripe LDs for 150 μm stripe width, lasing at about 808 nm under a continuous-wave (CW) condition. These LDs were stably operated for over 2000 h under the condition of 1 W constant output power with automatic power control circuits at 45°C in CW operation

Published in:

Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )