By Topic

Design and photoluminescence study on a multiquantum barrier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Takagi, Takeshi ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Koyama, F. ; Iga, K.

The structure of a multiquantum barrier (MQB) is discussed, and possible choices of well and barrier thickness and pair number for a visible AlGaInP laser in the 630 nm wavelength range are examined. Is it confirmed that an effective potential barrier can be two times as high as a classical potential barrier. The potential barrier height under biased conditions is shown to be larger than 50 meV, considering the variation of Fermi level changes in the MQB region. This may contribute to higher temperature CW operation when introduced into visible AlGaInP lasers. By photoluminescence (PL) measurement, the effect of electron-wave confinement of a GaAs/AlGaAs MQB is experimentally verified. A weak saturation in PL excitation power dependence and less sensitive temperature dependence were observed. These effects could be due to the increase in potential barrier height, and show a superior carrier confinement of MQB

Published in:

Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )