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Effects of nonradiative recombination on the temperature characteristics of threshold current density in 670 nm GaInAsP-AlGaAs visible lasers

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2 Author(s)
Chong, T.-H. ; Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan ; Kishino, K.

The effect of nonradiative recombinations on the temperature characteristics of threshold in 670 nm GaInAsP lasers are investigated with theoretical calculations. Lasers with different Al contents (X Al) and p-type doping carrier concentrations of the AlGaAs cladding layers were fabricated in order to evaluate the threshold current densities (Jth) and the temperature characteristics of Jth. The dependence of Jth on the active layer thickness was also evaluated. By subtracting the calculated pure radiative recombination component of Jth from the experimental J th values, the nonradiative recombination current densities were obtained as a function of inverse temperature. The thermal activation energies were evaluated for different ΔEg . It was found that the nonradiative recombinations were governed by the heterobarrier heights. The increase of Jth with decreasing XAl was explained theoretically in terms of the carrier leakage over heterobarriers. It is concluded that the carrier leakage components are the main nonradiative recombination processes in these lasers

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Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )