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New window-structure InGaAlP visible light laser diodes by self-selective Zn diffusion-induced disordering

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4 Author(s)
Itaya, K. ; Toshiba Corp., Kawasaki, Japan ; Ishikawa, M. ; Hatakoshi, G. ; Uematsu, Yutaka

The behavior of Zn diffusion in InGaAlP double heterostructures during a second metalorganic chemical vapor deposition (MOCVD) growth was investigated, and it found that the behavior of Zn diffusion strongly depends on the presence of an n-GaAs capping layer. A process for InGaAlP window-structure InGaAlP laser diodes was designed using this unique diffusion behavior and disordering of a natural superlattice. A window structure realizing a high power operation was successfully fabricated. A maximum output power above 80 mW was obtained for continuous wave (CW) operation, and 400 mW for pulsed operation

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Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )