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TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice

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7 Author(s)
Okamoto, M. ; NTT Opto-Electron. Lab., Kanagawa, Japan ; Sato, K. ; Mawatari, H. ; Kano, F.
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A novel tensile strained barrier (TSB) structure is proposed as the active layer to enhance the transverse-magnetic (TM) mode gain in long wavelength laser diodes. The band diagram of the TSB structure is described theoretically and experimentally. The gain difference between transverse-electric (TE) and TM modes is discussed for layers with various strain values and well layer thicknesses. The characteristics of TM-mode enhanced devices are reported as applications of the mode gain control using the TSB structure. In Ga0.27In0.53As-Gax In1-xAs tensile strained layer superlattice structures, controllability of a mode gain difference is achieved by changing the strain value and/or thickness of wells

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Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )