By Topic

TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Okamoto, M. ; NTT Opto-Electron. Lab., Kanagawa, Japan ; Sato, K. ; Mawatari, H. ; Kano, F.
more authors

A novel tensile strained barrier (TSB) structure is proposed as the active layer to enhance the transverse-magnetic (TM) mode gain in long wavelength laser diodes. The band diagram of the TSB structure is described theoretically and experimentally. The gain difference between transverse-electric (TE) and TM modes is discussed for layers with various strain values and well layer thicknesses. The characteristics of TM-mode enhanced devices are reported as applications of the mode gain control using the TSB structure. In Ga0.27In0.53As-Gax In1-xAs tensile strained layer superlattice structures, controllability of a mode gain difference is achieved by changing the strain value and/or thickness of wells

Published in:

Quantum Electronics, IEEE Journal of  (Volume:27 ,  Issue: 6 )