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Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs

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12 Author(s)
M. R. Murti ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; J. Laskar ; S. Nuttinck ; S. Yoo
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In this paper, we present detailed on-wafer S-parameter and noise parameter measurements and modeling of ZnP/InAlAs/InGaAs high electron mobility transistors (0.1-μm gate length) at cryogenic temperatures. Various physical effects influencing small-signal parameters, especially the radio-frequency (RF) transconductance and RF output resistance and their temperature dependence, are discussed in detail. Accurate on-wafer noise parameter measurements are carried out from 300 to 18 K, and the variation of the equivalent noise temperatures of drain and source (T d and Tg) are modeled against temperature. Based on these models, a cryogenic low-noise amplifier in the Kα-band is developed with a record low noise temperature of 10 K

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IEEE Transactions on Microwave Theory and Techniques  (Volume:48 ,  Issue: 12 )