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A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

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6 Author(s)
J. J. Xu ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; S. Keller ; G. Parish ; S. Heikman
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In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on sapphire substrates, as the active devices. The devices were flip-chip integrated onto the aluminum nitride circuit board for thermal management and electric connection. The circuit topology used novel LCR-matching networks in a four-way binary-Wilkinson combiner structure. Using devices with 0.7-μm gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10-GHz bandwidth. Output power of 8 W (continuous wave) at 9.5 GHz with about 20% power-added efficiency was achieved when biased at 24 V, which is the highest output power for a power amplifier using GaN-HEMTs-on-sapphire

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IEEE Transactions on Microwave Theory and Techniques  (Volume:48 ,  Issue: 12 )