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Asymmetric coupled CMOS lines-an experimental study

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4 Author(s)
Arz, U. ; Lab. of Inf. Technol., Hannover Univ., Germany ; William, D.F. ; Walker, D.K. ; Grabinski, H.

This paper investigates the properties of asymmetric coupled lines built in a 0.25 μm CMOS technology over the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port scattering-parameter measurements agree well with numerical predictions. We also demonstrate by measurement and calculation that the two fundamental modes of the coupled-line system share significant cross power. To our knowledge, this is the first complete experimental characterization of asymmetric coupled lines on silicon ever reported

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:48 ,  Issue: 12 )