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Bias-dependent linear scalable millimeter-wave FET model

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2 Author(s)
J. Wood ; Microwave Technol. Center, Agilent Technol. Inc., Santa Rosa, CA, USA ; D. E. Root

This paper describes a measurement-based bias-dependent linear equivalent circuit field-effect-transistor/high-electron-mobility-transistor model that is accurate to at least 100 GHz and scalable up to 12 parallel gate fingers and from 100 to 1000 μm total gate width. A new and accurate technique for extracting the Z-shell parameters has been developed, and the scaling rules for all the parasitic elements have been determined. The intrinsic equivalent circuit element values are determined at each bias point in Vge-Vds space and interpolated by splines between points

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:48 ,  Issue: 12 )