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Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature

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3 Author(s)
G. Steinle ; Corp. Res. Photonics, Infineon Technol. AG, Munich, Germany ; H. Riechert ; A. Yu. Egorov

The authors report on electrically pumped MBE-grown VCSELs on GaAs substrate with an InGaAsN active region. Emitting above 1.28 μm with record characteristics. The CW output power at room temperature exceeds 500 μW with an initial slope efficiency of 0.17 W/A

Published in:

Electronics Letters  (Volume:37 ,  Issue: 2 )