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Enhancement of wafer test/package yields by oxide-capping of microlens in CMOS image sensor

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6 Author(s)
Oh, H.S. ; Syst. IC R&D Div., Hyundai Electron. Ind., Kyoungki, South Korea ; Hong, H.J. ; Lee, J.I. ; Park, S.J.
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This paper reports the oxide-capping process of microlenses in a CMOS image sensor and its effect on wafer test/package yields of the product. CMOS image sensors with 8 μm×8 μm pixel size were fabricated by 0.5 μm CMOS logic process incorporated with color filter and microlens processes. After the formation of the microlens, a thin oxide film was deposited as a capping material, and finally pad windows were opened. From the analysis of the yield data, it is concluded that the oxide-capping of the microlenses guarantees the stable wafer test yield and also gives rise to noticeable increase of package yield for CMOS image sensors

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ASICs, 2000. AP-ASIC 2000. Proceedings of the Second IEEE Asia Pacific Conference on

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