By Topic

The effects of ionizing radiation on the data retention of static random access memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Benedetto, J.M. ; Aeroflex UTMC, Colorado Springs, CO, USA ; Jordan, A. ; LaValley, N.

The sensitivity of 4-transistor/2-resistor SRAMs to loss of stored data at nominal voltage levels is shown to increase following exposure to ionizing radiation. Pre-irradiation screening techniques and adjusted/modified device specifications can eliminate data retention failures during mission use

Published in:

Radiation Effects Data Workshop, 2000

Date of Conference:

2000