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The effects of ionizing radiation on the data retention of static random access memories

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3 Author(s)
Benedetto, J.M. ; Aeroflex UTMC, Colorado Springs, CO, USA ; Jordan, A. ; LaValley, N.

The sensitivity of 4-transistor/2-resistor SRAMs to loss of stored data at nominal voltage levels is shown to increase following exposure to ionizing radiation. Pre-irradiation screening techniques and adjusted/modified device specifications can eliminate data retention failures during mission use

Published in:

Radiation Effects Data Workshop, 2000

Date of Conference: