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Wordline voltage generating system for low-power low-voltage flash memories

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9 Author(s)
Tanzawa, T. ; Toshiba Corp., Yokohama, Japan ; Umezawa, A. ; Kuriyama, M. ; Taura, T.
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A low-power wordline voltage generating system is developed for low-voltage flash memories. The limit for the stand-by current including the operation current for the band-gap reference and the stand-by wordline voltage generator is discussed. The system was implemented on a 1.8-V 32-Mb flash memory fabricated with a 0.25-μm flash memory process and achieved with very low stand-by current of 2 μA typically, and high operating frequency of 25 MHz in read operation at 1.8 V. A low-voltage level shifter with high-speed switching is also proposed

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:36 ,  Issue: 1 )

Date of Publication:

Jan 2001

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