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1.5 V 1.8 GHz bandpass amplifier

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4 Author(s)
K. -L. Chan ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; M. -A. Do ; K. -S. Yeo ; J. -G. Ma

To have a fully integrated communication system in CMOS, a CMOS bandpass amplifier which combines the functions of low noise amplifier (LNA) and bandpass filter (BPF) is necessary. In a conventional bandpass amplifier, a Q-enhancement circuit is required to compensate for the resistive loss in the integrated inductor. The Q-enhancement circuit, however, being active, increases the power consumption (Pd) and noise figure (NF) of the system. In the paper, a new bandpass amplifier has been proposed which can achieve the required Q without an additional Q-enhancement circuit. Comparison with other recent designs shows that the proposed amplifier has the lowest Pd and the best noise performance. Based on the CSM 0.25 μm CMOS process, the bandpass amplifier has a gain of 25.3 dB, a Q of 30, an NF of 3.56 dB and a Pd of 35.7 mW at 1.8 GHz

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IEE Proceedings - Circuits, Devices and Systems  (Volume:147 ,  Issue: 6 )