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Ka-band high-power and driver MMIC amplifiers using GaAs PHEMTs and coplanar waveguides

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4 Author(s)
Bessemoulin, A. ; Fraunhofer Inst. for Appl. Solid-State Phys., Germany ; Massler, H. ; Hulsmann, A. ; Schlechtweg, M.

We report the design and fabrication of compact 2- and 3-stage coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifiers having high output power at Ka-band. Based on a 0.15-μm gate length GaAs PHEMT process, a two-stage MMIC driver amplifier has demonstrated at 35 GHz, a linear gain of 11 dB, an output power at 1 dB gain compression P-1 dB of 350 mW, and a saturated output power P sat greater than 500 mW. For the same frequency, the high-power CPW 2-stage amplifier achieved a linear gain of 9.5 dB, with P-1 dB=725 mW and more than 1 W of saturated output power, Additional thermal management resulted in an increased performance, namely, 10.4 dB linear gain, P-1 dB=950 mW and Psat=1.2 W. To our knowledge, these are the highest output powers ever reported at Ka-band for any uniplanar MMIC

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:10 ,  Issue: 12 )