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High-power and highly reliable 780 nm band AlGaAs laser diodes with rectangular ridge structure

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7 Author(s)
Hiroyama, R. ; Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan ; Nomura, Y. ; Furusawa, K. ; Okamoto, S.
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A record light output power of 240 mW has been achieved for the 780 nm band AlGaAs laser diodes by using a rectangular ridge structure. The laser diodes have been operated for >1000 h at 60°C under 150 mW pulsed operation

Published in:

Electronics Letters  (Volume:37 ,  Issue: 1 )