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Low temperature epitaxial layer transferring using oxygen plasma wafer bonding

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3 Author(s)
D. Pasquariello ; Angstrom Lab., Uppsala Univ., Sweden ; M. Camacho ; K. Hjort

Summary form only given. Although wafer bonding alleviates the mismatch constraint the difference in thermal expansion remains. Consequently the high temperature annealing (400 C-700 C) that is required to strengthen the bonding may severely degrade the material, even making it to crack. Therefore low temperature bonding processes are highly sought for when bonding dissimilar materials. For the experiments silicon wafers were used with InP and InGaAs epitaxial layers grown on InP substrates. After activating the surfaces, using our optimised oxygen plasma procedure, the wafers were placed in contact. During contacting of the wafers it is observed that the bonding is very spontaneous

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Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:2 )

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