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GaAsSb-based alloys for long-wavelength lasers

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7 Author(s)
Anan, T. ; Opt. Interconnection, NEC Corp., Ibaraki, Japan ; Nishi, Kenichi ; Yamada, Mitsuki ; Kurihara, K.
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We will review the growth, structural, and optical properties of GaAsSb QWs and the material gain improvement of lasers using modulation doping in the active region and the state-of-the-art device performance of GaAsSb VCSELs. We grew GaAsSb QWs with GaAs barriers on n-GaAs (100) substrates by using gas-source molecular beam epitaxy (GSMBE) and metal-organic vapor phase epitaxy (MOVPE)

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Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:2 )

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