Cart (Loading....) | Create Account
Close category search window
 

Evaluation of high-T0 1.3 μm strained quantum well lasers on InGaAs ternary substrates by frequency response

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Sekine, N. ; RWCP Opt. Interconnection Fujitsu Lab., Atsugi, Japan ; Otsubo, K. ; Nishijima, Y. ; Aoki, O.
more authors

We have fabricated 1.3 μm strained quantum well lasers on InGaAs ternary substrate. A low threshold current density of <80 A/cm 2/well and high T0 of >100 K were simultaneously realized. Furthermore, it was found that dg/dn of the sample was enhanced by the effect of the deep potential well. By improving the quality of InGaAs substrates, larger dg/dn should be obtainable

Published in:

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:2 )

Date of Conference:

2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.