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A simple, high performance complementary TFSOI BiCMOS technology with excellent cross-talk isolation and high-Q inductors for low power wireless applications

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3 Author(s)
M. Kumar ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China ; Yue Tan ; J. K. O. Sin

Recent growth in the portable wireless communication market and the push for a mixed-signal system-on-chip (SOC) approach means that TFSOI technology has been explored to provide low power, low cost, and high performance solutions (Reedy et al., 1999). The previously reported TFSOI BiCMOS technology is simple but needs performance improvement (Parke et al., 1992), and while another type needs a very complicated process (Huang et al., 1993). High performance SOI lateral BJTs were reported recently (Shino et al., 1998; Nii et al, 1999). However, they need special processes and are not CMOS compatible. To provide a mixed-signal system-on-chip solution, the technology should include low power CMOS devices, low noise BJT devices, and high Q-factor on-chip inductors. Furthermore, all of these devices should be properly isolated. This paper presents a simple, high performance complementary TFSOI BiCMOS technology with the best ever reported cross-talk isolation and high-Q inductors. This technology is very promising for low power, mixed-signal RF system-on-chip applications

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SOI Conference, 2000 IEEE International

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