By Topic

Capture rate enhance method of 0.1-μm level defects by pattern-matching inspectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
K. Sakurai ; Manuf. Eng. Center, Mitsubishi Electr. Corp., Hyogo, Japan ; A. Onoyama ; H. Ishii ; K. Oka
more authors

In this paper, a method of enhancing the capture rate of 0.1-μm level defects by pattern-matching inspectors is studied from the viewpoint of image variances. By our method, defect inspection engineers can obtain quantitative information for enhancing the capture rate of 0.1-μm level defects on both actual devices and test element groups (TEGs). The inspection sensitivities were experimentally evaluated by using the detection rate of the defects on an actual device and on the TEG. The image noise and the defect signal of the captured charge-coupled device (CCD) images of the same defect were quantitatively analyzed. The observed image noise and the defect signal obey a normal distribution. The capture rate calculated by our model, based on normal distribution, almost agrees with the experimental data. Next, we propose a new criterion called the “practical rapture rate” by uniting the rapture rate and the false count. The threshold value optimized from the viewpoint of the practical capture rate agrees with empirical thresholds value set by our defect inspection engineers. Finally, as an example of capture rate enhancement, a unique TEG called TWICE (TEG with image contrast enhancing) for photoresist inspection is demonstrated

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:13 ,  Issue: 4 )